S8746-01 参数 Datasheet PDF下载

PHOTODIODE

Si photodiode with preamp

S8745-01, S8746-01

Photodiode and preamp integrated with feedback resistance and capacitance

S8745-01, S8746-01 are low-noise sensors consisting of Si photodiode, op amp, and feedback resistance and capacitance, all integrated into a

small package. By simply connecting to a power supply, S8745-01 and S8746-01 can be used in low-light-level measurement such as analytical

equipment and measurement equipment. The active area of the photodiode is internally connected to the GND terminal making it highly resistant

to EMC noise.

Features

Applications

S8745-01: TO-5

S8746-01: TO-8

l

Active area

S8745-01: 2.4 × 2.4 mm

S8746-01: 5.8 × 5.8 mm

l

FET input operational amplifier with low power

dissipation

l

Built-in Rf=1 GΩ and Cf=5 pF

l

Variable gain with an externally connected resistor

l

Low noise and NEP

l

Package with shielding effect

l

Resistant to EMC noise

l

Si photodiode for UV to near IR precision photometry

l

Small hermetic sealed package with quartz window

l

Spectrophotometry

l

General-purpose optical measurement

S8745-01, S8746-01 may be damaged by Electro Static Discharge, etc. Please see Precautions for use in the last page.

s

Absolute maximum ratings (Ta=25

°C)

Parameter

Supply voltage (op amp)

Power dissipation

Operating temperature

Storage temperature

Symbol

Vcc

P

Topr

Tstg

Value

±20

500

-20 to +60

-30 to +80

Unit

V

mW

°C

°C

s

Electrical and optical characteristics (Typ. Ta=25

°C,

Vcc=±15 V, R

L

=1 MΩ, unless otherwise noted)

Parameter

Spectral response range

Peak sensitivity wavelength

Feedback resistance (built-in)

Feedback capacitance (built-in)

Photo sensitivity

Output noise voltage

Noise equivalent power

Output offset voltage

Cut-off frequency

Output voltage swing

Supply current

Symbol

λ

λp

Rf

Cf

S

Vn

NEP

Vos

fc

Vo

Icc

Condition

S8745-01

190 to 1100

960

1

5

0.12

0.52

6

5

11

11

±4

32

13

0.3

7

6

15

15

S8746-01

Unit

nm

nm

GΩ

pF

V/nW

µVrms/Hz

1/2

fW/Hz

1/2

mV

Hz

V

mA

λ=200

nm

λ=λp

Dark state f=10 Hz

Dark state, f=20 Hz

λ=λp,

f=10 Hz

λ=λp,

f=20 Hz

Dark state

-3 dB

Dark state

1