PHOTODIODE
Si PIN photodiode
S9055 series
Flat response characteristics up to high frequency bands
S9055 series Si PIN photodiodes deliver a high-speed response exceeding 1 GHz at low bias voltage (V
R
=2 V). Their low capacitance (less than
1 pF) makes them ideal for combination with high-speed trans-impedance amplifiers.
Features
Applications
l
Flat response characteristics up to high frequency bands
Frequency flatness: -0.5 dB Max.
(V
R
=2 V,
λ=830
nm, f=100 MHz)
l
High-speed response
S9055: 1.5 GHz (V
R
=2 V, -3 dB)
S9055-01: 2 GHz (V
R
=2 V, -3 dB)
l
Low capacitance
S9055: 0.8 pF (V
R
=2 V)
S9055-01: 0.5 pF (V
R
=2 V)
l
Highly reliable package: 3-pin TO-18 package
l
Optical fiber communications
l
High-speed measurement system
l
Optical inter-connection
s
General rating / absolute maximum ratings (Ta=25
°C)
Parameter
Active area
Reverse voltage
Operating temperature
Storage temperature
Symbol
-
V
R
Max.
Topr
Tstg
S9055
φ0.2
20
-40 to +100
-55 to +125
S9055-01
φ0.1
Unit
mm
V
°C
°C
s
Electrical and optical characteristics (Ta=25
°C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Dark current
Terminal capacitance
Cut-off frequency
Frequency flatness
Symbol
λ
λp
S
I
D
Ct
fc
-
Condition
S9055
Min.
Typ.
Max.
320 to 1000
-
700
-
0.2
0.25
-
-
1
100
-
0.8
1.2
1.0
-
1.5
-
-
-0.5
S9055-01
Min.
Typ.
Max.
320 to 1000
-
700
-
0.2
0.25
-
-
1
100
-
0.5
0.75
1.5
-
2
-
-
-0.5
Unit
nm
nm
A/W
pA
pF
GHz
dB
λ=850
nm
V
R
=2 V
V
R
=2 V, f=1 MHz
V
R
=2 V, R
L
=25
Ω
-3dB
V
R
=2 V,
λ=850
nm
f=100 MHz
1
HAMAMATSU [ HAMAMATSU CORPORATION ]
