PHOTODIODE
Si APD
S5343 to S5345, S9073 to S9075
Short wavelength type APD
Features
Applications
l
High sensitivity and low noise in UV to visible range
l
Low-light-level measurement
l
Analytical equipment
s
General ratings / Absolute maximum ratings
Type No.
Dimensional
outline/
Window
material *
1
➀/U
➁/U
➂/U
Package
Effective active *
area size
(mm)
φ0.2
φ0.5
φ1.0
φ1.5
φ3.0
φ5.0
2
Effective
active area
(mm
2
)
0.03
0.19
0.78
1.77
7.0
19.6
Absolute maximum ratings
Operating
Storage
temperature
temperature
Topr
Tstg
(°C)
(°C)
S9073
S9074
S5343
S9075
S5344
S5345
TO-18
TO-5
TO-8
-20 to +60
-55 to +100
s
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
S p ectral
response
range
λ
Photo Quantum B reakd o w n
Peak *
3
Tem p.
sensitivity efficiency voltage
sensitivity
coefficient
S
QE
V
BR
wavelength
of
M=1
M=1
I
D
=100 µA
V
BR
λp
λ=620
nm
λ=620
nm
Typ. Max.
(V) (V)
Dark *
3
Cut-off *
3
Term inal *
3
current frequency
capacitance
fc
I
D
Ct
R
L
=50
Ω
Typ. Max.
(nA) (nA) (MHz)
900
400
0.2 5
250
0.5 15
100
1 30
25
3 100
8
Excess *
3
noise
Gain
figure
M
x
λ=65
0 nm
λ=650
nm
Type No.
(nm)
(nm)
(A/W)
(%)
S9073
S9074
S5343
200 to 1 00 0
620
0.42
80
150 200
S9075
S5344
S5345
*1: U: UV glass
*2: Area in which a typical gain can be obtained.
*3: Values measured at a gain listed in the characteristics table.
(V/°C)
0.14
(pF)
3
7
15
30
120
320
0.28
50
1
HAMAMATSU [ HAMAMATSU CORPORATION ]
