PHOTODIODE
Si photodiode with preamp
S9295 series
Large area photodiode integrated with op amp and TE-cooler
S9295 series is a thermoelectrically cooled Si photodiode with preamp developed for low-light-level detection. A large area photodiode, op amp,
TE-cooler and feedback resistor (10 GΩ) are integrated into a single package. A thermistor is also included in the same package for temperature
control so that the photodiode and I-V conversion circuit can be cooled for stable operation. S9295 series also features low noise and low NEP,
and is especially suitable for NOx detection. The active area of the photodiode is internally connected to the GND terminal making it highly
resistant to EMC noise.
Features
Applications
S9295 :
∆T=50
˚C
S9295-01:
∆T=30
˚C
l
High stability with thermistor
l
Highly resistant to EMC noise
l
Large active area: 10 × 10 mm
l
NOx detection
l
UV to NIR Si photodiode optimized for precision photometry
l
Low-light-level measurement, etc.
l
Compact hermetic package with sapphire window
l
High precision FET input operational amplifier
l
High gain: Rf=10 GΩ
l
Low noise and NEP
l
High cooling efficiency
S9295 series may be damaged by Electro Static Discharge, etc. Please see Precautions for use in the last page.
s
Absolute maximum ratings
Parameter
Supply voltage (preamp)
Operating temperature
Storage temperature
TE-cooler allowable voltage *
1
TE-cooler allowable current
Thermistor power dissipation
*1: Ripple Max.: 10 %
*2: S9295-01: 3.7 V
Symbol
Value
Vcc
±20 V
Topr
-30 to +60
°C
Tstg
-40 to +80
°C
Vte
5 V *
2
Ite
1A
Pth
0.2 mW
s
Recommended operating conditions
Parameter
Symbol
Supply voltage (preamp)
Vcc
TE-cooler current
Ite
Thermistor power dissipation Pth
Load resistance
R
L
Value
±5 to ±15 V
0.8 A Max.
0.03 mW Max.
100 kΩ Min.
s
Electrical and optical characteristics (Typ. Vcc=±15 V, R
L
=1 MΩ)
Parameter
Spectral response range
Peak sensitivity wavelength
Feedback resistance (built-in) *
3
Photo sensitivity
Symbol
λ
λp
Rf
S
λ=200
nm
λ=λp
D ark state, f=10 Hz
λ=λp,
f=10 Hz
Dark state
-3 dB
Condition
S9295
T= -25
°C
190 to 1100
960
10
0.9
5.1
20
4
±2
190
13
0.3
30
0.9
5.1
25
5
±2
180
S9295-01
T= -5
°C
Unit
nm
nm
GΩ
V/nW
µVrms/Hz
1/2
fW/Hz
1/2
mV
Hz
V
mA
kΩ
Output noise voltage
Vn
Noise equivalent power
NEP
Output offset voltage
Vos
Cut-off frequency
fc
Output voltage swing
Vo
Supply current
Icc
Dark state
Thermistor resistance
Rth
86
*3: Custom devices are available with different Rf values and/or internal Cf, etc.
1