PHOTODIODE
Si PIN photodiode
S9723, S9724
Large area Si PIN photodiode for direct detection
S9723 and S9724 are large-area Si detectors specifically designed for the direct detection of high-energy charged particles and X-rays. These Si
detectors are mounted on PC boards with holes for the purpose of
∆E-E
detection of charged particles. These detector’s thicknesses are 100 ± 5
µm (S9723) and 10 ± 2.5 µm (S9724). Thickness uniformities of the active area are as good as 2.0 µm Typ. (S9723) and 1.0 µm Typ. (S9724).
This ensures excellent sensitivity uniformity over the entire active area.
Features
Applications
1 µm (S9724)
l
Active area : 26 × 26 × 0.1
t
mm (S9723)
10 × 10 × 0.01
t
mm (S9724)
l
Large area
l
Low dark current
l
Thickness uniformity *
1
: 2 µm (S9723)
l
Heavy ions energy detection
l
X-ray detection
l
∆E-E
detection
s
Specifications/Absolute maximum ratings
Parameter
Symbol
Active area
-
Detector thickness
-
1
Thickness uniformity *
-
Surface orientation
-
Front side
Dead layer
-
2
thickness *
Rear side
Reverse voltage
V
R
Max.
Current
-
3
Operating temperature *
Topr
3
Storage temperature *
Tstg
*1: Variation in the detector thickness
*2: Reference value
*3: No condensation
S9723
26 × 26
100 ± 5
2.0
(111)
1
1
20
2
0 to +60
0 to +80
2
S9724
10 × 10
10 ± 2.5
1.0
Unit
mm
µm
µm
-
µm
V
mA
°C
°C
s
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Parameter
Full depletion voltage
Dark current
Rise time
Terminal capacitance
Symbol
V
D
I
D
tr
Ct
Condition
V
R
=V
D
V
R
=V
D
, R
L
=50
Ω
V
R
=V
D
, f=1 MHz
Min.
-
-
-
-
S9723
Typ.
5
2
80
0.75
Max.
10
50
-
-
Min.
-
-
-
-
S9724
Typ.
0.5
0.01
100
1
Max.
1
0.1
-
-
Unit
V
nA
ns
nF
PRELIMINARY DATA
Sep. 2004
1
HAMAMATSU [ HAMAMATSU CORPORATION ]
