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HDD32M72B9-13A 参数 Datasheet PDF下载

HDD32M72B9-13A图片预览
型号: HDD32M72B9-13A
PDF下载: 下载PDF文件 查看货源
内容描述: DDR SDRAM模组256Mbyte ( 32Mx72bit ) ,基于on32Mx8,4Banks , 8K参考,无缓冲ECC SO- DIMM [DDR SDRAM Module 256Mbyte (32Mx72bit), based on32Mx8,4Banks, 8K Ref., ECC Unbuffered SO-DIMM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 12 页 / 199 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit
HDD32M72B9
DDR SDRAM Module 256Mbyte (32Mx72bit), based on32Mx8,4Banks,
8K Ref., ECC Unbuffered SO-DIMM
Part No. HDD32M72B9
GENERAL DESCRIPTION
The HDD32M72B9 is a 32M x 72 bit Double Data Rate(DDR) Synchronous Dynamic RAM high-density memory module.
The module consists of nine CMOS 32M x 8 bit with 4banks DDR SDRAMs in 66pin TSOP-II 400mil packages and 2K
EEPROM in 8-pin TSSOP package on a 200-pin glass-epoxy. Four 0.1uF decoupling capacitors are mounted on the printed
circuit board in parallel for each DDR SDRAM. The HDD32M72B9 is a SO-DIMM(Small Outline Dual in line Memory
Module) .Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible
on both edges of DQS. Range of operating frequencies, programmable latencies and burst lengths allows the same device
to be useful for a variety of high bandwidth, high performance m emory system applications. All module components may be
powered from a single 2.5V DC power supply and all inputs and outputs are SSTL_2 compatible.
FEATURES
Part Identification
HDD32M72B9
16B
HDD32M72B9
13A
HDD32M72B9
13B
:
:
:
166MHz (CL=2.5)
133MHz (CL=2)
133MHz (CL=2.5)
256MB(32Mx64) Unbuffered DDR SO-DIMM based on 32Mx8 DDR SDRSM with ECC
2.5V
±
0.2V VDD and VDDQ power supply
Auto & self refresh capability (8192 Cycles/64ms)
All input and output are compatible with SSTL_2 interface
Data(DQ), Data strobes and write masks latched on the rising and falling edges of the clock
All Addresses and control inputs except Data(DQ), Data strobes and Data masks latched on the rising edges of the clock
MRS cycle with address key programs
- Latency (Access from column address) : 2, 2.5
- Burst length : 2, 4, 8
- Burst type : Sequential & Interleave
Data(DQ), Data strobes and write masks latched on the rising and falling edges of the clock
All Addresses and control inputs except Data(DQ), Data strobes and Data masks latched on the rising edges of the clock
The used device is 8M x 8bit x 4Banks DDR SDRAM
Auto & Self refresh, 7.8us refresh interval (8K/64ms refresh)
Serial Presence detect with EEPROM
URL : www.hbe.co.kr
REV 1.0 (July. 2003)
1
HANBit Electronics Co.,Ltd.