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HMD1M1Z1-6 参数 Datasheet PDF下载

HMD1M1Z1-6图片预览
型号: HMD1M1Z1-6
PDF下载: 下载PDF文件 查看货源
内容描述: 为1Mbit ( 1Mx1bit )快速页面模式, 1K刷新, 20针ZIP, 5V设计 [1Mbit(1Mx1bit) Fast Page Mode, 1K Refresh, 20Pin ZIP, 5V Design]
分类和应用:
文件页数/大小: 6 页 / 193 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit
HMD1M1Z1
1Mbit(1Mx1bit) Fast Page Mode, 1K Refresh, 20Pin ZIP, 5V Design
Part No. HMD1M1Z1
DESCRIPTION
The HMD1M1Z1 is an 1M x 1 bits Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of
memory cells
within the same row. Power supply voltage (+5V ), access time (-5, -6), power consumption(Normal or Low power), and package
type (ZIP)
are optional features of this Module. The HMD1M1Z1 have CAS-before-RAS refresh, RAS-only refresh and Hidden
refresh capabilities.
The HMD1M1Z1 is optimized for application to the systems, which are required high density and large capacity such as main
memory for main frames and mini computers, personal computer and high performance microprocessor systems.
The HMD1M1Z1 provides common data and outputs.
Features
w
Fast Page Mode operation
w
CAS-before-RAS refresh capability
w
RAS-only and Hidden refresh capability
w
Fast parallel test mode capability
w
TTL(5V) compatible inputs and outputs
w
Early write or output enable controlled write
w
Available in 20pin ZIP packages
w
Single +5V± 10% power supply
w
1,024 Refresh Cycles/16ms
w
Performance Range
Speed
HMD1M1Z1-5
HMD1M1Z1-6
t
RAC
50
60
t
CAC
15
15
t
RC
90
110
t
PC
35
40
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
PIN ASSIGNMENT
SYMBOL
NC
/CAS
DOUT
V
SS
DIN
/WE
/RAS
NC
NC
A9NC
A0
A1
A2
A3
V
CC
A4
A5
A6
A7
A8
PIN DESCRIPTION
PIN
A0
A8
DQ0
DQ3
/RAS
/CAS
FUNCTION
Address Inputs
Data
Input/Output
Row Address
Strobe
Column
Address Strobe
PIN
/WE
Vcc
Vss
NC
FUNCTION
Read/Write
Enable
Power
(+5V)
Ground
No
Connection
15
16
17
18
19
20
1
HANBit Electronics Co.,Ltd.