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HMF1M64F4VS-120 参数 Datasheet PDF下载

HMF1M64F4VS-120图片预览
型号: HMF1M64F4VS-120
PDF下载: 下载PDF文件 查看货源
内容描述: FLASH- ROM模块现象8字节( 1M ×64位) , 120PIN SMM , 3.3V [FLASH-ROM MODULE 8MByte (1M x 64-Bit) ,120PIN SMM,3.3V]
分类和应用:
文件页数/大小: 13 页 / 288 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
MIN.
Block Erase Time
Chip Erase Time
Word Programming Time
Chip Programming Time
-
-
-
TYP.
0.7
27
11
12
330
36
MAX.
15
sec
sec
µs
sec
UNIT
HMF1M64F4VS
COMMENTS
Excludes 00H programming
prior to erasure
Excludes system-level
overhead
TSOP CAPACITANCE
PARAMETER
SYMBOL
C
IN
C
OUT
C
IN2
PARAMETER
DESCRIPTION
Input Capacitance
Output Capacitance
Control Pin Capacitance
TEST SETUP
V
IN
= 0
V
OUT
= 0
V
IN
= 0
MIN
-
-
-
MAX
10
10
10
UNIT
pF
pF
pF
Notes
: Capacitance is periodically sampled and not 100% tested
.
TEST SPECIFICATIONS
TEST CONDITION
Output load
Input rise and full times
Input pulse levels
Input timing measurement reference levels
Output timing measurement reference levels
VALUE
1TTL gate
5
0 to 3
1.5
1.5
5.0V
ns
V
V
V
UNIT
2.7kΩ
Device
Under
Test
C
L
IN3064
or Equivalent
6.2kΩ
Diodes = IN3064
or Equivalent
Note
: C
L
= 100pF including jig capacitance
URL : www.hbe.co.kr
REV.02(August,2002)
5
HANbit Electronics Co., Ltd.