HANBit
HMF4M32M8G
TRUTH TABLE
MODE
/OE
X
/CE
H
/WE
X
DQ
HIGH-Z
HIGH-Z
Q
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
STANDBY
NOT SELECTED
READ
H
L
H
L
L
H
WRITE or ERASE
X
L
L
D
NOTE
: X means don’t care
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
Voltage with respect to ground all other pins
Voltage with respect to ground Vcc
Storage Temperature
VIN,OUT
VCC
-2.0V to +7.0V
-2.0V to +7.0V
o o
-65 C to +125 C
TSTG
o o
-55 C to +125 C
Operating Temperature
TA
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the devic e.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extende d
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
MIN
TYP.
MAX
PARAMETER
Vcc for ± 10% device Supply Voltages
Ground
Vcc
VSS
4.5V
0
5.5V
0
0
o
o
DC AND OPERATING CHARACTERISTICS (0 C £ T £ 70 C ; Vcc = 5V ± 0.5V )
A
TEST CONDITIONS
SYMBOL
MIN
MAX
UNITS
PARAMETER
Input Leakage Current
Vcc=Vcc max, VIN= GND to Vcc
Vcc=Vcc max, VOUT= GND to Vcc
IOH = -2.5mA, Vcc = Vcc min
IOL = 12mA, Vcc =Vcc min
/CE = VIL, /OE=VIH,
IL1
IL0
±1.0
±1.0
mA
mA
V
Output Leakage Current
Output High Voltage
Output Low Voltage
Vcc Active Current for Read(1)
Vcc Active Current for Program
or Erase(2)
VOH
VOL
ICC1
2.4
0.45
40
V
mA
/CE = VIL, /OE=VIH
/CE= VIH
ICC2
60
mA
Vcc Standby Current
Low Vcc Lock-Out Voltage
Notes:
ICC3
1.0
4.2
mA
V
VLKO
3.2
1. The Icc current listed is typically less than 2mA/MHz, with /OE at VIH.
2. Icc active while embedded algorithm (program or erase) is in progress
3. Maximum Icc current specifications are tested with Vcc=Vcc max
3
URL: www.hbe.co.kr
REV.02(August,2002)
HANBit Electronics Co., Ltd.
HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
