HANBit
Note :
1.
2.
3.
4.
The Icc current listed is typically less 2mA/MHz, with /OE at V
IH
.
Icc active while Embedded Erase or Embedded Program is progress.
HMF6M32M6V
Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+30ns.
Typical sleep mode current is 200nA.
Not 100% tested.
LATCHUP CHARACTERISTICS
DESCRIPTION
Input Voltage with respect to Vss on all pins except I/O Pins
(Including A9,/OE, and /Reset)
Input Voltage with respect to Vss on all I/O Pins
Vcc Current
Includes all pins except Vcc. Test conditions: Vcc=3.0V, one pin at a time.
MIN
-1.0V
-1.0V
-100mA
MAX
12.5V
Vcc+1.0V
+100mA
DATA RETENTION
PARAMETER
Minimum Pattern Data
Retention Time
TEST CONDITIONS
150 C
125 C
O
O
MIN
10
20
UNIT
Years
Years
ERASE AND PROGRAMMING PERFORMANCE
PARAMETER
Sector Erase Time
Chip Erase Time
Word Programming Time
Chip Programming Time (Word Mode)
(Note3)
Notes :
1. Typical program and erase times assume the following conditions: 25 C, 3.0V Vcc, 1,000,000 cycles. Additionally
programming typical assume checkerboard pattern.
2. Under worst case conditions of 90 C, Vcc=2.7V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, sin ce
most bytes program faster than the maximum program times listed
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two-or four-bus-cycle sequence for the program command.
See table 9 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
O
O
TYP
(NOTE1)
1.6
112
11
24
MAX (NOTE2)
15
UNIT
sec
sec
COMMENTS
Excludes 00h programming prior to
erasure (Note4)
Excludes system level overhead
(Note5)
360
72
us
sec
URL:www.hbe.co.kr
REV1.0 (June, 2003)
4
HANBit Electronics Co., Ltd.
HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
