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HMF8M16F8VS-120 参数 Datasheet PDF下载

HMF8M16F8VS-120图片预览
型号: HMF8M16F8VS-120
PDF下载: 下载PDF文件 查看货源
内容描述: FLASH- ROM模块16兆字节( 8M ×16位) , SMM 80Pin [FLASH-ROM MODULE 16MByte (8M x 16-Bit) , SMM 80Pin]
分类和应用:
文件页数/大小: 12 页 / 417 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit
HMF8M16F8VS
FLASH-ROM MODULE 16MByte (8M x 16-Bit) , SMM 80Pin
Part No. HMF8M16F8VS
GENERAL DESCRIPTION
The HMF8M16F8VS is a high-speed flash read only memory (FROM) module containing 8,388,608 words organized in an
x16bit configuration. The module consists of eight 2M x 8 FROM mounted on a 80-pin, MMC connector FR4-printed circuit board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is
similar to reading from 12.0V flash or EPROM devices.
Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or
erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low-power
design. All module components may be powered from a single +3V DC power supply and all inputs and outputs are LVTTL-
compatible.
PIN ASSIGNMENT
FEATURES
w
Part identification
HMF8M16F8VS
(Bottom boot block configuration)
w
Access time: 90, 100, 120ns
w
High-density 16MByte design
w
High-reliability, low-power design
w
Single + 3V to 3.6V power supply
w
80-Pin Designed
40-Pin, 0.8mm Fine Pitch Connector P1,P2
w
Minimum 100,000 write cycle guarantee
per sector
w
10-year data retention at 85 oC
w
Flexible sector architecture
w
Embedded algorithms
w
Erase suspend / Erase resume
6
7
8
9
10
11
12
13
- 90
-100
16
120ns access
w
Packages
SMM 80-pin
F
19
20
A15
VCC
39
40
DQ0
VCC
19
20
NC
VCC
39
40
A1
VCC
-120
17
18
A13
A14
37
38
DQ1
DQ8
17
18
NC
NC
37
38
A3
A2
A12
36
DQ9
16
NC
36
A4
14
15
100ns access
RY_BY*
VSS
RESET*
WE*
A19
A8
A9
A10
VSS
A11
26
27
28
29
30
31
32
33
34
35
DQ13
VSS
DQ5
DQ12
DQ4
DQ11
DQ3
DQ10
VSS
DQ2
6
7
8
9
10
11
12
13
14
15
CE5*
VSS
CE6*
CE7*
NC
NC
NC
NC
VSS
NC
26
27
28
29
30
31
32
33
34
35
CE0*
VSS
A16
A0
A18
A17
A7
A6
VSS
A5
PIN
1
2
3
4
5
Symbol
VCC
NC
NC
NC
NC
P1
PIN
21
22
23
24
25
Symbol
VCC
DQ15
DQ7
DQ14
DQ6
PIN
1
2
3
4
5
Symbol
VCC
CE1*
CE2*
CE3*
CE4*
P2
PIN
21
22
23
24
25
Symbol
VCC
NC
NC
BYTE*
OE*
OPTIONS
w
Timing
90ns access
MARKING
FUNCTIONAL BLOCK DIAGRAM
URL:
www.hbe.co.kr
REV.02(August,2002)
1
HANBit Electronics Co., Ltd.