HANBit
HMN12816D
Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V
Part No. HMN12816D
GENERAL DESCRIPTION
The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as
131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which
constantly monitors Vcc for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is
automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package
HMN12816D devices can be used in place of solutions which build nonvolatile 128Kx16 memory by utilizing a
variety of discrete components. There is no limit on the number of write cycles that can be executed and no additional
support circuitry is required for microprocessor interfacing.
The HMN12816D uses extremely low standby current CMOS SRAM’s, coupled with small lithium coin cells to provide non-
volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.
FEATURES
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Access time : 70, 85, 120, 150ns
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High-density design : 256KByte Design
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Battery internally isolated until power is applied
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Industry-standard 40-pin 128K x 16 pinout
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Unlimited write cycles
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Data retention in the absence of V
CC
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10-years minimum data retention in absence of power
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Automatic write-protection during power-up/power-down
cycles
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Data is automatically protected during power loss
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Conventional SRAM operation; unlimited write cycles
PIN ASSIGNMENT
/CEU
/CEL
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
DQ8
Vss
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
/OE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
Vcc
/WE
A16
A15
A14
A13
A12
A11
A10
A9
Vss
A8
A7
A6
A5
A4
A3
A2
A1
A0
OPTIONS
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Timing
70 ns
85 ns
120 ns
150 ns
MARKING
- 70
- 85
-120
-150
40-pin Encapsulated Package
URL : www.hbe.co.kr
Rev. 0.0 (April, 2002)
1
HANBit Electronics Co.,Ltd
HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
