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HMN2M8D-150I 参数 Datasheet PDF下载

HMN2M8D-150I图片预览
型号: HMN2M8D-150I
PDF下载: 下载PDF文件 查看货源
内容描述: 非易失性SRAM模块16兆( 2,048K ×8位) , 36PIN DIP, 5V [Non-Volatile SRAM MODULE 16Mbit (2,048K x 8-Bit), 36Pin-DIP, 5V]
分类和应用: 静态存储器
文件页数/大小: 9 页 / 174 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit
HMN2M8D
- Read Cycle No.3 (/OE Access)
*1,5
t
RC
Address
t
ACC
/OE
t
OE
D
OUT
t
OLZ
High-Z
t
OHZ
Data Valid
High-Z
NOTES:
1. /WE is held high for a read cycle.
2. Device is continuously selected: /CE = /OE =V
IL
.
3. Address is valid prior to or coincident with /CE transition low.
4. /OE = V
IL
.
5. Device is continuously selected: /CE = V
IL
- WRITE CYCLE NO.1 (/WE-CONTROLLED)
*1,2,3
t
WC
Address
t
AW
t
CW
/CE
t
AS
/WE
t
DW
D
IN
t
WZ
D
OUT
Data Undefined (1)
Data-in Valid
t
OW
High-Z
t
DH1
t
WP
t
WR1
URL : www.hbe.co.kr
Rev. 1.0 (May, 2002)
7
HANBit Electronics Co.,Ltd