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HMN4M8DVN-120 参数 Datasheet PDF下载

HMN4M8DVN-120图片预览
型号: HMN4M8DVN-120
PDF下载: 下载PDF文件 查看货源
内容描述: 非易失性SRAM模块32兆( 4,096K ×8位) , 40PIN DIP, 3.3V [Non-Volatile SRAM MODULE 32Mbit (4,096K x 8-Bit), 40Pin-DIP, 3.3V]
分类和应用: 静态存储器
文件页数/大小: 9 页 / 182 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit
CAPACITANCE
(T
A
=25℃ , f=1MHz)
DESCRIPTION
Input Capacitance
Input/Output Capacitance
CONDITIONS
Input voltage = 0V
Output voltage = 0V
SYMBOL
C
IN
C
I/O
MAX
8
10
HMN4M8DV(N)
MIN
-
-
UNIT
pF
pF
NOTE:
1. Capacitance is sampled, not 100% tested.
DC AND OPERATION CHARACTERISTICS
(T
A
= T
OPR
, V
CCmin
£
V
CC
V
CCmax
)
PARAMETER
Input Leakage Current
Output Leakage Current
Output high voltage
Output low voltage
Standby supply current
CONDITIONS
V
IN
=V
SS
to V
CC
/CE=V
IH
or /OE=V
IH
or /WE=V
IL
I
OH
=-1.0 mA
I
OL
= 2.1 mA
/CE≥ V
CC
-0.2V
Cycle time=Min, 100% duty,
I
I/O
=0㎃ ,
/CE<V
cc
-0.2V,
Average operating current
V
IN
<0.2V or V
IN
>V
CC
-0.2V
Cycle time=1us, 100% duty,
I
I/O
=0㎃ ,
/CE=V
IL
, V
IN
=V
IL
or V
IH
Power-fail-detect voltage
Supply switch-over voltage
V
PFD
V
SO
2.5
-
2.6
3
2.7
-
V
V
I
CC2
-
-
50
I
CC1
-
-
12
SYMBOL
I
LI
I
LO
V
OH
V
OL
I
SB1
MIN
-4
-4
2.4
-
-
TYP.
-
-
-
-
-
MAX
+4
+4
-
0.4
80
UNI
T
mA
mA
V
V
mA
CHARACTERISTICS
(Test Conditions)
PARAMETER
Input pulse levels
Input rise and fall times
Input and output timing
reference levels
Output load
(including scope and jig)
See Figure 1 and 2
VALUE
0 to 3V
< 5 ns
1.5V
( unless otherwise specified)
Figure 1.
Output Load A
1KΩ
D
OUT
1.9KΩ
+5V
D
OUT
100㎊
+5V
1.9KΩ
5㎊
1KΩ
Figure 2.
Output Load B
URL : www.hbe.co.kr
Rev. 1.0 (May, 2002)
4
HANBit Electronics Co.,Ltd