HANBit
HMN5128D
Non-Volatile SRAM MODULE 4Mbit (512K x 8-Bit),32Pin-DIP, 5V
Part No. HMN5128D
GENERAL DESCRIPTION
The HMN5128D Nonvolatile SRAM is a 4,194,304-bit static RAM organized as 524,288 bytes by 8 bits.
The HMN5128D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write
cycles of standard SRAM and integral control circuitry which constantly monitors the single 5V supply for an out-of-
tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the
memory until after Vcc returns valid and write protection is unconditionally enabled to prevent garbled data. In addition the
SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is
switched on to sustain the memory until after V
CC
returns valid.
The HMN5128D uses extremely low standby current CMOS SRAM’s, coupled with small lithium coin cells to provide non-
volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.
FEATURES
w
Access time : 70, 85,120, 150 ns
w
High-density design : 4Mbit Design
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Battery internally isolated until power is applied
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Industry-standard 32-pin 512K x 8 pinout
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Unlimited write cycles
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Data retention in the absence of V
CC
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10-years minimum data retention in absence of power
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Automatic write-protection during power-up/power-down
cycles
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Data is automatically protected during power loss
w
Conventional SRAM operation; unlimited write cycles
A
18
PIN ASSIGNMENT
A
16
A
14
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
DQ
0
DQ
1
DQ
2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A
15
A
17
/WE
A
13
A
8
A
9
A
11
/OE
A
10
/CE
DQ
7
DQ
6
DQ
5
DQ
4
DQ
3
32-pin Encapsulated Package
OPTIONS
w
Timing
70 ns
85 ns
120 ns
150 ns
MARKING
-70
-85
-120
-150
URL : www.hbe.co.kr
Rev. 0.0 (April, 2002)
1
HANBit Electronics Co.,Ltd
HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
