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HMNR1288D-70 参数 Datasheet PDF下载

HMNR1288D-70图片预览
型号: HMNR1288D-70
PDF下载: 下载PDF文件 查看货源
内容描述: 5.0或3.3V , 1兆位( 128千位×8 ) TIMEKEEPER NVSRAM [5.0 or 3.3V, 1 Mbit (128 Kbit x 8) TIMEKEEPER NVSRAM]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 14 页 / 315 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit  
HMNR1288D(V)  
OPERATING MODES  
The 32-pin, 600mil DIP Hybrid houses a controller chip, SRAM, quartz crystal, and a long life lithium button cell in a single  
package. The clock locations contain the year, month, date, day, hour, minute, and second in 24 hour BCD format.  
Corrections for 28, 29 (leap year-compliant until the year 2100), 30, and 31 day months are made automatically. Byte  
1FFF8h is the clock control register. This byte controls user access to the clock information and also stores the clock  
calibration setting. The seven clock bytes (1FFFFh-1FFF9h) are not the actual clock counters, they are memory locations  
consisting of READ/WRITE memory cells within the static RAM array. The HMNR1288D(V) includes a clock control circuit  
which updates the clock bytes with current information once per second. The information can be accessed by the user in  
the same manner as any other location in the static memory array. The HMNR1288D(V) also has its own Power-Fail  
Detect circuit. This control circuitry constantly monitors the supply voltage for an out of tolerance condition.  
When VCC is out of tolerance, the circuit write protects the TIMEKEEPER register data and SRAM, providing data security  
in the midst of unpredictable system operation. As VCC falls, the control circuitry automatically switches to the battery,  
maintaining data and clock operation until valid power is restored.  
Operating Modes  
Mode  
Deselect  
WRITE  
READ  
VCC  
/CE  
VIH  
VIL  
VIL  
VIL  
/OE  
X
/WE  
X
DQ7 DQ0  
High-Z  
DIN  
Power  
Standby  
Active  
4.5V to 5.5V  
or  
X
VIL  
VIH  
VIH  
VIL  
VIH  
DOUT  
High  
Active  
3.0V to 3.6V  
READ  
Active  
CMOS  
Deselect  
VSO to VPFD (min)  
X
X
X
X
X
High  
High  
Standby  
Battery Back-  
up  
VSO (1)  
Deselect  
X
Note : X = VIH or VIL; VSO = Battery Back-up Switchover Voltage.  
READ Mode  
The HMNR1288D(V) is in the READ Mode whenever /WE (WRITE Enable) is high and /CE (Chip Enable) is low. The  
unique address specified by the 17 Address Inputs defines which one of the 131,072 bytes of data is to be accessed. Valid  
data will be available at the Data I/O pins within Address Access Time (tAVQV) after the last address input signal is stable,  
providing the /CE and /OE access times are also satisfied. If the /CE and /OE access times are not met, valid data will be  
available after the latter of the Chip Enable Access Times (tELQV) or Output Enable Access Time (tGLQV). The state of the  
eight three-state Data I/O signals is controlled by /CE and /OE. If the outputs are activated before tAVQV, the data lines will  
be driven to an indeterminate state until tAVQV. If the Address Inputs are changed while /CE and /OE remain active, output  
data will remain valid for Output Data Hold Time (tAXQX) but will go indeterminate until the next Address Access.  
Figure 2. READ Mode AC Waveforms  
/CE  
/OE  
Note : /WE = High.  
URL : www.hbe.co.kr  
Rev. 1.0 (April, 2002)  
5
HANBit Electronics Co.,Ltd