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HMS12832M4G 参数 Datasheet PDF下载

HMS12832M4G图片预览
型号: HMS12832M4G
PDF下载: 下载PDF文件 查看货源
内容描述: SRAM模块512K字节( 128K ×32位) , 64引脚SIMM / ZIP [SRAM MODULE 512KByte (128K x 32-Bit), 64PIN SIMM / ZIP]
分类和应用: 静态存储器
文件页数/大小: 11 页 / 123 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit
TIMING DIAGRAMS
HMS12832M4G/Z4
NOTES(READ
CYCLE)
1.
2.
3.
4.
5.
6.
7.
8.
WE is high for read cycle.
All read cycle timing is referenced from the last valid address to the first transition address.
tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced
to VOH or VOL levels.
At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from
device to device.
Transition is measured
±
200mV from steady state voltage with Load(B). This parameter is sampled and not 100%
tested.
Device is continuously selected with CS=VIL.
Address valid prior to coincident with CS transition low.
For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and
write cycle.
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002)
6
HANBit Electronics Co.,Ltd.