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HSD16M32D4-10 参数 Datasheet PDF下载

HSD16M32D4-10图片预览
型号: HSD16M32D4-10
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM模块64Mbyte ( 16Mx32位) , 100PIN DIMM , 4Banks , 8K参考, 3.3V [Synchronous DRAM Module 64Mbyte(16Mx32-Bit), 100pin DIMM, 4Banks, 8K Ref., 3.3V]
分类和应用: 存储动态存储器
文件页数/大小: 10 页 / 145 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit
HSD16M32D4
Synchronous DRAM Module 64Mbyte(16Mx32-Bit), 100pin DIMM,
4Banks, 8K Ref., 3.3V
Part No. HSD16M32D4
GENERAL DESCRIPTION
The HSD16M32D4 is a 16M x 32 bit Synchronous Dynamic RAM high density memory module. The module consists of
four CMOS 2M x 16 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 100-pin glass-epoxy substrate.
Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD16M32D4
is a DIMM( Dual in line Memory Module) and is intended for mounting into 100-pin edge connector sockets. Synchronous
design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range
of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high
performance memory system applications All module components may be powered from a single 3.3V DC power supply
and all inputs and outputs are LVTTL-compatible.
FEATURES
Part Identification
HSD16M32D4-10 : 100MHz (CL=2)
HSD16M32D4-10L : 100MHz (CL=3)
HSD16M32D4-12 : 125MHz (CL=3)
HSD16M32D4-13 : 133MHz (CL=3)
Burst mode operation
Auto & self refresh capability (8192 Cycles/64ms)
LVTTL compatible inputs and outputs
Single 3.3V
±0.3V
power supply
MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
All inputs are sampled at the positive going edge of the system clock
The used device is 4M x 16bit x 4Banks SDRAM
www.hbe.co.kr
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HANBit Electronics Co.,Ltd.