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HSD16M32F4VA-10L 参数 Datasheet PDF下载

HSD16M32F4VA-10L图片预览
型号: HSD16M32F4VA-10L
PDF下载: 下载PDF文件 查看货源
内容描述: 基于16Mx8 , 4Banks , 4K参考同步DRAM模块64Mbyte ( 16M ×32位) SMM 。 , 3.3V [Synchronous DRAM Module 64Mbyte ( 16M x 32-Bit ) SMM based on 16Mx8, 4Banks, 4K Ref., 3.3V]
分类和应用: 存储动态存储器
文件页数/大小: 11 页 / 103 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit
PIN FUNCTION DESCRIPTION
Pin
CLK
/CE
Name
System clock
Chip enable
Input Function
HSD16M32F4V/VA
Active on the positive going edge to sample all inputs.
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQM
CKE
Clock enable
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
CKE should be enabled 1CLK+tSS prior to valid command.
A0 ~ A11
Address
Row/column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA11, Column address : CA0 ~ CA9
BA0
BA1
/RAS
~
Bank select address
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
Row address strobe
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
/CAS
Column address strobe
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
/WE
Write enable
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
DQM0 ~ 7
Data input/output mask
Makes data output Hi-Z, tSHZ after the clock and masks the output.
Blocks data input when DQM active. (Byte masking)
DQ0 ~ 63
VDD/VSS
Data input/output
Power supply/ground
Data inputs/outputs are multiplexed on the same pins.
Power and ground for the input buffers and the core logic.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage on Any Pin Relative to Vss
Voltage on Vcc Supply Relative to Vss
Power Dissipation
Storage Temperature
SYMBOL
V
IN ,OUT
Vcc
P
D
T
STG
RATING
-1V to 4.6V
-1V to 4.6V
4W
-55oC to 150oC
Short Circuit Output Current
I
OS
400mA
Notes:
Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
URL: www.hbe.co.kr
REV 1.0 (August.2002).
3
HANBit Electronics Co.,Ltd