HANBit
HSD16M64B4W
Synchronous DRAM Module 128Mbyte(16Mx64-Bit), 144pin SO-DIMM,
4Banks, 8K Ref., 3.3V
Part No.
HSD16M64B4W
GENERAL DESCRIPTION
The HSD16M64B4W is a 16M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists
of four CMOS 2M x 16 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate.
Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The
HSD16M64B4W is a SO-DIMM(Small Outline Dual in line Memory Module) and is intended for mounting into 144-pin
edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions
are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be
useful for a variety of high bandwidth, high performance memory system applications All module components may be
powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.
FEATURES
•
Part Identification
HSD16M64B4W-10 : 100MHz (CL=2)
HSD16M64B4W-10L : 100MHz (CL=3)
HSD16M64B4W-12 : 125MHz (CL=3)
HSD16M64B4W-13 : 133MHz (CL=3)
•
Burst mode operation
•
Auto & self refresh capability (8192 Cycles/64ms)
•
LVTTL compatible inputs and outputs
•
Single 3.3V
±0.3V
power supply
•
MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
•
All inputs are sampled at the positive going edge of the system clock
•
The used device is 4M x 16bit x 4Banks SDRAM
URL: www.hbe.co.kr
REV 1.0 (August.2002)
1
HANBit Electronics Co.,Ltd.
HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
