HSD16M64F8K 参数 Datasheet PDF下载

HANBit

HSD16M64F8K

Synchronous DRAM Module 128Mbyte (16Mx64bit), SMM ,16Mx8,

4Banks, 4K Ref. 3.3V

Part No. HSD16M64F8K

GENERAL DESCRIPTION

The HSD16M64F8K is a 16M x 64 bit Synchronous Dynamic RAM high-density memory module. The module consists

of

eight

CMOS 16M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages and 2K EEPROM in 8-pin

TSSOP package on a 120-pin glass-epoxy. Three 0.1uF decoupling capacitors are mounted on the printed circuit board in

parallel for each SDRAM. The HSD16M64F8K is a SMM(Stackable Memory Module type) .Synchronous design allows

precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating

frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high

performance memory system applications All module components may be powered from a single 3.3V DC power supply

and all inputs and outputs are LVTTL-compatible.

FEATURES

•

Part Identification

HSD16M64F8K : 100MHz (CL=2

•

Burst mode operation

•

Auto & self refresh capability (4096 Cycles/64ms)

•

LVTTL compatible inputs and outputs

•

Single 3.3V

±0.3V

power supply

•

MRS cycle with address key programs

- Latency (Access from column address)

- Burst length (1, 2, 4, 8 & Full page)

- Data scramble (Sequential & Interleave)

•

All inputs are sampled at the positive going edge of the system clock

•

The used device is 4M x 8bit x 4Banks SDRAM

& CL=3)

URL:www.hbe.co.kr

REV.1.0(August.2002)

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HANBit Electronics Co.,Ltd.