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HSD32M64D8H-80 参数 Datasheet PDF下载

HSD32M64D8H-80图片预览
型号: HSD32M64D8H-80
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM模组256Mbyte ( 32Mx64bit ) , DIMM基于32Mx8 , 4Banks , 8K参考, 3.3V [Synchronous DRAM Module 256Mbyte (32Mx64bit),DIMM based on 32Mx8, 4Banks, 8K Ref., 3.3V]
分类和应用: 动态存储器
文件页数/大小: 10 页 / 84 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit
HSD32M64D8H
Synchronous DRAM Module 256Mbyte (32Mx64bit),DIMM based on
32Mx8, 4Banks, 8K Ref., 3.3V
Part No. HSD32M64D8H
GENERAL DESCRIPTION
The HSD32M64D8H is a 32M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists
of eight
CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 168-pin glass-epoxy
substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The
HSD32M64D8H is a DIMM(Dual in line Memory Module) and is intended for mounting into 168-pin edge connector
sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on
every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a
variety of high bandwidth, high performance memory system applications All module components may be powered from a
single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.
FEATURES
Part Identification
HSD32M64D8H-10 :100MHz ( CL=2)
HSD32M64D8H -10L :100MHz ( CL=3)
HSD32M64D8H -80 :125MHz ( CL=3)
HSD32M64D8H -75 :133Mhz (CL=3)
Burst mode operation
Auto & self refresh capability (8K Cycles/64ms)
LVTTL compatible inputs and outputs
Single 3.3V
±0.3V
power supply
MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
All inputs are sampled at the positive going edge of the system clock
The used device is 8M x 8bit x 4Banks SDRAM
URL:www.hbe.co.kr
REV.1.0 (August.2002)
-1-
HANBit Electronics Co.,Ltd.