HANBit
HSD4M64B4
Synchronous DRAM Module 32Mbyte (4Mx64-Bit), SO-DIMM,
4Banks, 4K Ref., 3.3V
Part No. HSD4M64B4
GENERAL DESCRIPTION
The HSD4M64B4 is a 4M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of
four CMOS 1M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate.
Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD4M64B4
is a SO-DIMM(Small Outline Dual in line Memory Module) and is intended for mounting into 144-pin edge connector
sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on
every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a
variety of high bandwidth, high performance memory system applications All module components may be powered from a
single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.
FEATURES
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Part Identification
HSD4M64B4-F/10 :100MHz ( CL=2)
HSD4M64B4-F/10L :100MHz ( CL=3)
HSD4M64B4-F/12 :125MHz ( CL=3)
HSD4M64B4-F/13 :133Mhz (CL=3)
* F : Auto Self-Refresh with Low Power
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Burst mode operation
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Auto & self refresh capability (4096 Cycles/64ms)
•
LVTTL compatible inputs and outputs
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Single 3.3V
±0.3V
power supply
•
MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
•
JEDEC standard
•
All inputs are sampled at the positive going edge of the system clock
•
The used device is 1Mx16Bitx4Banks SDRAM
URL:www.hbe.co.kr
REV.1.0(August.2002)
HANBit Electronics Co.,Ltd.
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