HANBit
HSD4M64D4B
Synchronous DRAM Module 32Mbyte (4Mx64-Bit), DIMM, 4Banks, 4K Ref.,
3.3V
Part No. HSD4M64D4B
GENERAL DESCRIPTION
The HSD4M64D4B is a 4M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of
four CMOS 1M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 168-pin glass-epoxy substrate.
Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD4M64D4B
is a DIMM(Dual in line Memory Module) and is intended for mounting into 168-pin edge connector sockets. Synchronous
design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range
of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high
performance memory system applications All module components may be powered from a single 3.3V DC power supply
and all inputs and outputs are LVTTL-compatible.
FEATURES
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Part Identification
HSD4M64D4B-10
HSD4M64D4B- 8
: 100MHz ( CL=2)
: 125MHz ( CL=3)
HSD4M64D4B-10L : 100MHz ( CL=3)
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Burst mode operation
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Auto & self refresh capability (4096 Cycles/64ms)
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LVTTL compatible inputs and outputs
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Single 3.3V
±0.3V
power supply
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MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
•
JEDEC standard
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All inputs are sampled at the positive going edge of the system clock
•
The used device is 1Mx16Bitx4Banks SDRAM
URL:www.hbe.co.kr
REV.1.0 (August.2002)
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HANBit Electronics Co.,Ltd