HANBit
HSD8M64D8H
Synchronous DRAM Module 64Mbyte (8Mx64bit), DIMM based on
8Mx8,4Banks, 4K Ref., 3.3V
Part No. HSD8M64D8H
GENERAL DESCRIPTION
The HSD8M64D8H is a 8M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of
eight
CMOS 2M x 8 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 168-pin glass-epoxy
substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The
HSD8M64D8H is a DIMM(Dual in line Memory Module) and is intended for mounting into 168-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock
cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high
bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC
power supply and all inputs and outputs are LVTTL-compatible.
FEATURES
•
Part Identification
HSD8M64D8H-10 : 100MHz (CL=2)
HSD8M64D8H-10L : 100MHz (CL=3)
HSD8M64D8H-13 : 133MHz (CL=3)
•
Burst mode operation
•
Auto & self refresh capability (4096 Cycles/64ms)
•
LVTTL compatible inputs and outputs
•
Single 3.3V
±0.3V
power supply
•
MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
•
All inputs are sampled at the positive going edge of the system clock
•
The used device is 2M x 8bit x 4Banks SDRAM
URL:www.hbe.co.kr
REV.1.0(August.2002)
1
HANBit Electronics Co.,Ltd.
HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
