HANBit
HSD8M64F8V/VA
DC OPERATING CONDITIONS
(Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70° C) )
PARAMETER
Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
SYMBOL
Vcc
V
IH
V
IL
V
OH
V
OL
MIN
3.0
2.0
-0.3
2.4
-
TYP.
3.3
3.0
0
-
-
MAX
3.6
Vcc+0.3
0.8
-
0.4
UNIT
V
V
V
V
V
1
2
I
OH
= -2mA
I
OL
= 2mA
3
NOTE
Input leakage current
I
LI
-10
-
10
uA
Notes :
1. V
IH
(max) = 5.6V AC. The overshoot voltage duration is
≤
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
V
IN
≤
V
DDQ
.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
CAPACITANCE
(VCC = 3.3V, TA = 23° C, f = 1MHz, VREF =1.4V
±
200 mV)
DESCRIPTION
Address(A0~A11, BA0~BA1)
/RAS, /CAS, /WE
CKE(CKE0)
Clock (CLK0, CLK1)
/CE (/CE0, /CE2)
DQM (DQM0 ~ DQM7)
DQ (DQ0 ~ DQ63)
SYMBOL
C
ADD
C
IN
C
CKE
C
CLK
C
CS
C
DQM
C
OUT
MIN
30
30
30
15
30
13
14
MAX
50
50
50
18
50
15
17
UNITS
pF
pF
pF
pF
pF
pF
pF
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70° C)
TEST
PARAMETER
SYMBOL
CONDITION
Burst length = 1
Operating current
(One bank active)
I
CC1
t
RC
≥
t
RC
(min)
I
O
= 0mA
I
CC2
P
CKE
≤
V
IL
(max)
t
CC
=10ns
CKE & CLK
≤
V
IL
(max)
t
CC
=∞
8
mA
8
mA
600
600
560
560
mA
1
-13
-12
-10
-10L
VERSION
UNIT
NOTE
Precharge standby current in
power-down mode
I
CC2
PS
URL:www.hbe.co.kr
REV.1.0(August.2002)
-4-
HANBit Electronics Co.,Ltd.
HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
