Semiconductor
January 1999
CT
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ODU CEMEN 7
PR
774
ETE
PLA
SOL DED RE 800-442-
OB
EN
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OMM lication harris.c
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High-Voltage Diode Array For
Ce
: c
Call or email
Industrial and Military
CA3141
Commercial,
Applications
Features
• Matched Monolithic Construction
- V
F
Match (Each Diode Pair) . . . . 0.55mV At I
F
= 1mA
• Low Diode Capacitance. . . . . . . 0.3pF (Typ) at V
R
= 2V
• High Diode-to-Substrate Breakdown. . . . . . . . . 30V (Min)
• Low Reverse (Leakage) Current . . . . . . . 100nA (Max)
Description
The CA3141E High Voltage Diode Array Consists of ten gen-
eral purpose high reverse breakdown diodes. Six diodes are
internally connected to form three common cathode diode
pairs, and the remaining four diodes are internally connected
to form two common anode diode pairs. Integrated circuit
construction assures excellent static and dynamic matching
of the diodes, making the CA3141 extremely useful for a
wide variety of applications in communications and switching
systems.
Applications
• Balanced Modulators or Demodulators
• Analog Switches
• High-Voltage Diode Gates
• Current Ratio Detectors
Part Number Information
PART NUMBER
CA3141E
TEMP.
RANGE (
o
C)
-55 to 125
PACKAGE
16 Ld PDIP
PKG.
NO.
E16.3
Pinout
CA3141
(PDIP)
TOP VIEW
1
2
3
4
5
6
7
8
D
5
D
6
D
2
D
3
D
9
D
7
D
1
D
10
16
15
14
13
12
11
10
9
D
4
D
8
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
©
Harris Corporation 1999
File Number
906.4
1
HARRIS [ HARRIS CORPORATION ]
