HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S
Typical Performance Curves
200
f
MAX
, OPERATING FREQUENCY (kHz)
100
V
GE
= 10V
V
GE
= 15V
f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
)
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
θJC
= 1.2
o
C/W
1
5
10
20
I
CE
, COLLECTOR-EMITTER CURRENT (A)
30
(Continued)
100
T
J
= 150
o
C, V
GE
= 15V, R
G
= 25Ω, L = 100µH
80
T
J
= 150
o
C, T
C
= 75
o
C
R
G
= 25Ω, L = 100µH
I
CE
, COLLECTOR-EMITTER CURRENT (A)
60
LIMITED BY
CIRCUIT
40
10
20
0
0
100
200
300
400
500
600
V
CE(PK)
, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 14. SWITCHING SAFE OPERATING AREA
V
CE
, COLLECTOR - EMITTER VOLTAGE (V)
2500
FREQUENCY = 1MHz
2000
C, CAPACITANCE (pF)
C
IES
600
I
G
REF = 1.276mA, R
L
= 50Ω, T
C
= 25
o
C
15
V
GE
, GATE-EMITTER VOLTAGE (V)
480
V
CE
= 600V
12
1500
360
9
1000
240
V
CE
= 400V
120
V
CE
= 200V
6
500
C
RES
0
0
C
OES
25
3
5
10
15
20
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
0
10
20
30
40
Q
G
, GATE CHARGE (nC)
50
60
0
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
Z
θ
JC
, NORMALIZED THERMAL RESPONSE
10
0
0.5
0.2
0.1
10
-1
0.05
0.02
0.01
SINGLE PULSE
10
-2
10
-5
10
-4
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
10
-3
10
-2
10
-1
t
1
, RECTANGULAR PULSE DURATION (s)
10
0
10
1
P
D
t
2
t
1
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
3-33
HARRIS [ HARRIS CORPORATION ]
