S E M I C O N D U C T O R
HGTP3N60C3D, HGT1S3N60C3D,
HGT1S3N60C3DS
6A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
Packaging
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
COLLECTOR (FLANGE)
January 1997
Features
• 6A, 600V at T
C
= 25
o
C
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 130ns at T
J
= 150
o
C
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Description
The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS
are MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and the
low on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25
o
C and 150
o
C. The IGBT used is the development type
TA49113. The diode used in anti-parallel with the IGBT is the
development type TA49055.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential.
PACKAGING AVAILABILITY
PART NUMBER
HGTP3N60C3D
HGT1S3N60C3D
HGT1S3N60C3DS
PACKAGE
TO-220AB
TO-262AA
TO-263AB
BRAND
G3N60C3D
G3N60C3D
G3N60C3D
JEDEC TO-262AA
COLLECTOR
(FLANGE)
A
EMITTER
COLLECTOR
GATE
JEDEC TO-263AB
M
A
A
COLLECTOR
(FLANGE)
GATE
EMITTER
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, i.e. HGT1S3N60C3DS9A.
Formerly Developmental Type TA49119.
G
E
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTP3N60C3D, HGT1S3N60C3D
HGT1S3N60C3DS
600
6
3
24
±20
±30
18A at 480V
33
0.27
-40 to 150
260
8
UNITS
V
A
A
A
V
V
W
W/
o
C
o
C
o
C
µs
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate-Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C, Fig. 14. . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Short Circuit Withstand Time (Note 2) at V
GE
= 10V, Fig 6 . . . . . . . . . . . . . . . . . . . . .t
SC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
V
CE(PK)
= 360V, T
J
= 125
o
C, R
GE
= 82Ω
.
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
©
Harris Corporation 1997
File Number
4140.1
3-9
HARRIS [ HARRIS CORPORATION ]
