S E M I C O N D U C T O R
HGTD3N60C3,
HGTD3N60C3S
6A, 600V, UFS Series N-Channel IGBTs
Description
The HGTD3N60C3 and HGTD3N60C3S are MOS gated high
voltage switching devices combining the best features of
MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state con-
duction loss of a bipolar transistor. The much lower on-state
voltage drop varies only moderately between 25
o
C and
150
o
C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49113.
June 1997
Features
• 6A, 600V at T
C
= 25
o
C
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 130ns at T
J
= 150
o
C
• Short Circuit Rating
• Low Conduction Loss
Ordering Information
PART NUMBER
HGTD3N60C3
HGTD3N60C3S
PACKAGE
TO-251AA
TO-252AA
BRAND
G3N60C
G3N60C
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in Tape and Reel, i.e.
HGTD3N60C3S9A.
Symbol
N-CHANNEL ENHANCEMENT MODE
C
G
E
Packaging
JEDEC TO-251AA
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
GATE
EMITTER
COLLECTOR
(FLANGE)
JEDEC TO-252AA
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright
©
Harris Corporation 1997
File Number
4139.3
1
HARRIS [ HARRIS CORPORATION ]
