S E M I C O N D U C T O R
HGTG30N60C3D
63A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
Package
JEDEC STYLE TO-247
E
C
G
August 1995
Features
•
•
•
•
•
63A, 600V at T
C
= +25
o
C
Typical Fall Time - 230ns at T
J
= +150
o
C
Short Circuit Rating
Low Conduction Loss
Hyperfast Anti-Parallel Diode
Description
The HGTG30N60C3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOS-
FET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately
between +25
o
C and +150
o
C. The IGBT used is the development
type TA49051. The diode used in anti-parallel with the IGBT is
the development type TA49053.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction
losses are essential.
PACKAGING AVAILABILITY
PART NUMBER
HGTG30N60C3D
PACKAGE
TO-247
BRAND
G30N60C3D
E
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
NOTE: When ordering, use the entire part number.
Formerly Developmental Type TA49014.
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTG30N60C3D
600
63
30
25
252
±20
±30
60A at 600V
208
1.67
-40 to +150
260
4
15
UNITS
V
A
A
A
A
V
V
W
W/
o
C
o
C
o
C
µs
µs
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector Current Continuous
At T
C
= +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= +110
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Average Diode Forward Current at +110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= +150
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Short Circuit Withstand Time (Note 2) at V
GE
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
Short Circuit Withstand Time (Note 2) at V
GE
= 10V . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= +125
o
C, R
GE
= 25Ω.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
©
Harris Corporation 1995
File Number
4041
1
HARRIS [ HARRIS CORPORATION ]
