S E M I C O N D U C T O R
RFP30N06LE, RF1S30N06LE,
RF1S30N06LESM
30A, 60V, ESD Rated, Avalanche Rated, Logic Level
N-Channel Enhancement-Mode Power MOSFETs
Packages
JEDEC TO-220AB
SOURCE
DRAIN
GATE
July 1995
Features
• 30A, 60V
• r
DS(ON)
= 0.047Ω
• 2kV ESD Protected
•
Temperature Compensating
PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
DRAIN
(FLANGE)
JEDEC TO-262AA
Description
The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM
are N-Channel power MOSFETs manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI integrated circuits gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switch-
ing regulators, switching converters, motor drivers and relay
drivers. These transistors can be operated directly from inte-
grated circuits.
These transistors incorporate ESD protection and are
designed to withstand 2kV (Human Body Model) of ESD.
PACKAGE AVAILABILITY
PART NUMBER
RFP30N06LE
RF1S30N06LE
RF1S30N06LESM
PACKAGE
TO-220AB
TO-262AA
TO-263AB
BRAND
F30N06LE
1S30N06L
1S30N06L
G
DRAIN
(FLANGE)
A
SOURCE
DRAIN
GATE
JEDEC TO-263AB
M
A
A
DRAIN
(FLANGE)
GATE
SOURCE
Symbol
D
NOTE: When ordering use the entire part number. Add suffix, 9A, to
obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A.
Formerly developmental type TA49027.
S
Absolute Maximum Ratings
T
C
= +25
o
C
RFP30N06LE, RF1S30N06LE,
RF1S30N06LESM
UNITS
V
V
V
A
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation
T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate above +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrostatic Discharge Rating, MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . ESD
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Copyright
60
60
+10, -8
30
Refer to Peak Current Curve
Refer to UIS Curve
96
0.645
2
-55 to +175
260
W
W/
o
C
kV
o
C
o
C
©
Harris Corporation 1995
5-45
File Number
3629.1
HARRIS [ HARRIS CORPORATION ]
