S E M I C O N D U C T O R
RFD10P03L, RFD10P03LSM,
RFP10P03L
10A, 30V, 0.200Ω, Logic Level
P-Channel Power MOSFET
Description
These products are P-Channel power MOSFETs manufac-
tured using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits, gives opti-
mum utilization of silicon, resulting in outstanding perfor-
mance. They were designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.
May 1997
Features
• 10A, 30V
• r
DS(ON)
= 0.200Ω
•
Temperature Compensating
PSPICE Model
• PSPICE Thermal Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
o
C Operating Temperature
Symbol
Ordering Information
PART NUMBER
RFD10P03L
RFD10P03LSM
RFP10P03L
PACKAGE
TO-251AA
TO-252AA
TO-220AB
BRAND
10P03L
10P03L
F10P03L
G
D
S
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the
TO-252AA
variant in tape and reel, i.e.
RFD10P03LSM9A..
Formerly developmental type TA49205.
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
DRAIN (FLANGE)
JEDEC TO-251AA
SOURCE
DRAIN
GATE
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
©
Harris Corporation 1997
File Number
3515.1
1
HARRIS [ HARRIS CORPORATION ]
