GD400HFL120C2S
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oes
C
res
Turn-On Switching
Loss
Turn-Off Switching
Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
SC Data
Internal gate resistance
Stray inductance
Module lead
resistance, terminal to
chip
T
C
=25℃
V
CE
=25V, f=1MHz,
V
GE
=0V
t
S
C
≤10μs,
V
GE
=15V,
T
j
=125℃, V
CC
=900V,
V
CEM
≤1200V
V
CC
=600V,I
C
=400A,
R
G
=2.5Ω, V
GE
=±15V,
T
j
=125℃
V
CC
=600V,I
C
=400A,
R
G
=2.5Ω, V
GE
=±15V,
T
j
=25℃
44
40
IGBT Module
mJ
mJ
ns
ns
ns
ns
mJ
mJ
nF
nF
nF
130
75
600
80
48
43
32.7
2.42
1.50
I
SC
R
Gint
L
CE
R
CC’+EE’
1900
2
18
0.32
A
Ω
nH
mΩ
Electrical Characteristics of DIODE
Tc=25℃ unless otherwise noted
Symbol
V
F
Q
r
Parameter
Diode Forward
Voltage
Diode Reverse
Recovery Charge
Diode Peak
Reverse Recovery
Current
Reverse Recovery
Energy
Test Conditions
I
F
=400A
T
j
=25℃
T
j
=125℃
T
j
=25℃
I
F
=400A,
V
R
=600V,
di/dt=-6000A/μs,
V
GE
=-15V
T
j
=125℃
T
j
=25℃
T
j
=125℃
T
j
=25℃
T
j
=125℃
Min.
Typ.
2.15
1.99
52
64
360
420
20
27
A
Max.
2.20
2.03
Units
V
μC
I
RM
E
rec
mJ
Thermal Characteristics
Symbol
R
θJC
R
θJC
R
θCS
Weight
Parameter
Junction-to-Case (IGBT Part, per 1/2 Module)
Junction-to-Case (DIODE Part, per 1/2 Module)
Case-to-Sink (Conductive grease applied)
Weight of Module
0.032
340
3/8
Typ.
Max.
0.048
0.085
Units
K/W
K/W
K/W
g
Rev.D
HB [ HB ELECTRONIC COMPONENTS ]
