HS5N60FA
N channel 600V MOSFET
1. Description
The HS5N60FA N-Channel enhancement mode silicon gate power MOSFET is designed for
high voltage, high speed power switching applications such as switching regulators, switching
converters, solenoid, motor drivers, relay drivers.
2. Feature
●
R
DS(ON)
≦2.5Ω@V
GS
=10V
●
Low gate charge ( typical 15nC)
●
Fast switching capability
●
Avalanche energy specified
●
Improved dv/dt capability
V
DS
R
DS
(on)
I
D
600
2.5
4.5
V
Ω
A
3. Pin configuration
Order Number
HS5N60FA
Package
TO-220F
Oct,2012-Ver1.0
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