Diode-Diode MODULE HDD25NXX
Symbol
Characteristics
Conditions
T
J
(
0
C)
Value
Unit
BLOCKING PARAMETERS
V
RRM
V
DRM
I
RRM
Repetitive peak reverse voltage
Repetitive peak off-stage voltage
Repetitive peak reverse current
150
150
150
200-1800
200-1800
3
V
V
mA
V = V
RRM
CONDUCTING PARAMETERS
I
F(AV)
I
RMS
I
FSM
I
2
t
V
T
V
0
R
0
Average on-state current
RMS on-state current
Surge on-state current
I
2
t
Peak on-state voltage drop
Threshold voltage
On-state slope resistance
Sine wave, 10mS
without reverse
voltage
On-state
current = 80A
150
180 sine, 50H
Z
, T
C
= 100
0
C
25
40
500
1250
1.40
0.85
6.00
A
A
A
A
2
S
V
V
mΩ
150
25
25
THERMAL & MECHANICAL PARAMETERS
R
TH (J-C)
R
TH (C-HK)
T
J
T
STG
V
ISOL
M1
M2
W
Thermal impedance, 180
conduction, Sine
Thermal impedance
Maximum Permissible junction
temperature
Storage temperature range
Insulation test voltage, RMS
Mounting Torque
Terminal connection Torque
Weight
J to C Per Arm
Per Module
C to HK Per Arm
Per Module
1.00
0.50
0.20
0.10
150
F = 50Hz, 1 min
-40 – 150
2.5
4
4
90
0
C/W
C/W
0
0
0
C
C
kV
NM
NM
gms
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