2SA1122
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Ratings
–55
–55
–5
–100
150
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
–55
–55
–5
—
—
160
—
—
D
CE
400 to 800
Typ
—
—
—
—
—
—
—
—
Max
—
—
—
–0.5
–0.5
800
–0.5
–0.75
V
V
Unit
V
V
V
µA
µA
Test conditions
I
C
= –10
µA,
I
E
= 0
I
C
= –1 mA, R
BE
=
∞
I
E
= –10
µA,
I
C
= 0
V
CB
= –30 V, I
E
= 0
V
EB
= –2 V, I
C
= 0
V
CE
= –12 V, I
C
= –2 mA
I
C
= –10 mA, I
B
= –1 mA
V
CE
= –12 V, I
C
= –2 mA
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter voltage
Note:
Grade
Mark
h
FE
B
CC
160 to 320
C
CD
250 to 500
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
V
BE
1. The 2SA1122 is grouped by h
FE
as follows.
See characteristic curves of 2SA836.
2
HITACHI [ HITACHI SEMICONDUCTOR ]
