2SC4262
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
20
15
V
3
V
50
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
PC
100
Tj
150
Tstg
–55 to +150
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
20
—
—
V
IC = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
15
—
—
V
IC = 1 mA, RBE = ∞
Collector cutoff current
Emitter cutoff current
ICBO
—
—
—
—
—
—
0.5
1.0
0.5
µA
µA
V
VCB = 15 V, IE = 0
VEB = 3 V, IC = 0
IEBO
Collector to emitter saturation
voltage
VCE(sat)
IC = 20 mA, IB = 4 mA
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Note: Marking is “IP–”.
hFE
Cob
fT
50
—
—
200
1.0
—
VCE = 10 V, IC = 5 mA
VCB = 10 V, IE = 0, f = 1MHz
VCE = 10 V, IC = 5 mA
—
pF
1.4
2.9
GHz
See characteristic curves of 2SC3793.
2
HITACHI [ HITACHI SEMICONDUCTOR ]
