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2SD1472 参数 Datasheet PDF下载

2SD1472图片预览
型号: 2SD1472
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN外延,达林顿 [Silicon NPN Epitaxial, Darlington]
分类和应用:
文件页数/大小: 6 页 / 36 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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2SD1472
Maximum Collector Dissipation Curve
1.2
Collector Power Dissipation Pc (W)
(on the alumina ceramic board)
Collector Current I
C
(A)
Area of Safe Operation
10
i
C (peak)
3
10
s
ms
0
µ
1
s
0m
1
µs
0.8
1.0
0.3
0.1
0.03
0.01
PW
=1
Ta = 25°C
1 Shot Pulse
0.4
0
50
100
150
Ambient Temperature Ta (°C)
3
10
30
100
300
Collector to Emitter Voltage V
CE
(V)
Typical Output Characteristics
2.0
Ta = 25°C
200
180
160
DC Current Transfer Ratio vs.
Collector Current
30,000
DC Current Transfer Ratio h
FE
Pc = 1
Collector Current I
C
(A)
1.6
10,000
=
75
°
C
W
140
120
1.2
3,000
Ta
0.8
100
µ
A
5
–2
25
V
CE
= 3 V
Pulse
1,000
0.4
I
B
= 0
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
300
0.1
0.3
1.0
3
Collector Current I
C
(A)
10
3