2SD1559
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Note:
1. Value at T
C
= 25°C.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
I
B
P
C
*
1
Tj
Tstg
Ratings
100
100
7
20
30
3
100
150
–55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
100
100
100
7
—
—
1000
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
—
1.0
9.0
3.0
Max
—
—
—
—
100
1.0
20000
2.0
2.5
3.0
3.5
—
—
—
V
V
V
V
µs
µs
µs
I
C
= 10 A, I
B1
= –I
B2
= 20 mA
I
C
= 20 A, I
B
= 200 mA*
1
Unit
V
V
V
V
µA
mA
Test conditions
I
C
= 0.1 mA, I
E
= 0
I
C
= 25 mA, R
BE
=
∞
I
C
= 200 mA, R
BE
=
∞*
1
V
EB
= 50 mA, I
C
= 0
V
CB
= 100 V, I
E
= 0
V
CE
= 80 V, R
BE
=
∞
V
CE
= 3 V, I
C
= 10 A*
1
I
C
= 10 A, I
B
= 20 mA*
1
Collector to emitter breakdown V
(BR)CEO
voltage
Collector to emitter sustain
voltage
Emitter to base breakdown
voltage
Collector cutoff current
V
CEO(sus)
V
(BR)EBO
I
CBO
I
CEO
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturatiopn
voltage
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time
Storage time
Fall time
Note:
1. Pulse test.
h
FE
V
CE(sat)1
V
BE(sat)1
V
CE(sat)2
V
BE(sat)2
t
on
t
stg
t
f
2
HITACHI [ HITACHI SEMICONDUCTOR ]
