2SK1880(L), 2SK1880(S)
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
Min
600
±30
—
—
2.0
—
0.85
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
6.5
1.4
250
55
8
10
25
35
30
0.95
350
Max
—
—
±10
100
3.0
8.0
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
µs
I
F
= 1.5 A, V
GS
= 0
I
F
= 1.5 A, V
GS
= 0,
di
F
/ dt = 100 A /
µs
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 500 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 1 A
V
GS
= 10 V*
1
I
D
= 1 A
V
DS
= 20 V*
1
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 1 A
V
GS
= 10 V
R
L
= 30
Ω
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note
1. Pulse Test
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
3
HITACHI [ HITACHI SEMICONDUCTOR ]
