2SK2569
Maximum Channel
Dissipation Curve
200
Pch (mW)
Maximum Safe Operation Area
1 ms
0.3
150
I
D
(A)
0.1
C
D
O
1
PW
=
10
s
m
Channel Dissipation
Drain Current
100
0.03
0.01
Operation in
this area is
limited by R
DS(on)
tio
ra
pe
n
50
0.003
0.001 Ta = 25
°C
0.1 0.3
1
0
50
100
150
Ta (°C)
200
3
10
30
V
DS
(V)
100
Ambient Temperature
Drain to Source Voltage
0.20
Typical Output Characteristics
10 V 4 V
0.20
2.5 V
2.3 V
(A)
0.16
Typical Transfer Characteristics
I
D
(A)
0.16
0.12
2V
I
D
0.12
25°C
Tc = 75°C
–25°C
Drain Current
0.08
Drain Current
0.08
0.04
Pulse Test
0
V
GS
= 1.5 V
8
V
DS
(V)
10
0.04
V
DS
= 5 V
Pulse Test
0
1
2
3
Gate to Source Voltage
4
V
GS
(V)
5
2
4
6
Drain to Source Voltage
3
HITACHI [ HITACHI SEMICONDUCTOR ]
