2SK3158
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Note:
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note3
E
AR Note3
Pch
Note2
Tch
Tstg
Ratings
150
±20
30
120
30
30
67
100
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
1. PW
≤
10µs, duty cycle
≤
1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg
≥
50Ω
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
150
±20
—
—
1.0
—
—
18
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
35
42
30
2600
820
350
25
180
600
280
0.95
110
Max
—
—
±10
10
2.5
45
75
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= 30A, V
GS
= 0
I
F
= 30A, V
GS
= 0
diF/ dt =50A/µs
Test Conditions
I
D
= 10mA, V
GS
= 0
I
G
=
±100µA,
V
DS
= 0
V
GS
=
±16V,
V
DS
= 0
V
DS
= 150 V, V
GS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 15A, V
GS
= 10V
Note4
I
D
= 15A, V
GS
= 4V
Note4
I
D
= 15A, V
DS
= 10V
Note4
V
DS
= 10V
V
GS
= 0
f = 1MHz
I
D
= 15A, V
GS
= 10V
R
L
= 2Ω
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Note:
4. Pulse test
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
2
HITACHI [ HITACHI SEMICONDUCTOR ]
