2SK3348
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
1.0
Static Drain to Source on State
Resistance vs. Drain Current
Pulse Test
5
VGS = 2.5 V
2
4V
Static Drain to Source on State Resistance
R DS(on) ( )
10
Drain to Source Saturation Voltage
V DS(on) (V)
Pulse Test
0.8
10 mA
50 mA
0.6
1.0
0.5
0.4
I D = 100 mA
0.2
0.2
0.1
0.01 0.02
0
6
2
4
Gate to Source Voltage
8
VGS (V)
10
0.05 0.1 0.2
0.5
Drain Current I D (A)
1.0
Static Drain to Source on State Resistance
R
DS(on)
( )
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance |y fs | (S)
5
1.0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
Forward Transfer Admittance
vs. Drain Current
V DS = 10 V
Pulse Test
Tc = –25 °C
4
100m A
3
V
GS
=2.5V
2
4V
10m A,50m A,100mA
Pulse Test
0
40
80
Tc
120
( °C)
160
Case Temperature
-10m A
I
D
= -50m A
75°C
25 °C
1
0
–40
0.002
0.001
0.01 0.02
0.05
0.1
0.2
0.5
1.0
Drain Current I D (A)
4
HITACHI [ HITACHI SEMICONDUCTOR ]
