欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SK3566 参数 Datasheet PDF下载

2SK3566图片预览
型号: 2SK3566
PDF下载: 下载PDF文件 查看货源
内容描述: 开关稳压器的应用 [Switching Regulator Applications]
分类和应用: 晶体稳压器开关晶体管脉冲局域网
文件页数/大小: 6 页 / 253 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
 浏览型号2SK3566的Datasheet PDF文件第2页浏览型号2SK3566的Datasheet PDF文件第3页浏览型号2SK3566的Datasheet PDF文件第4页浏览型号2SK3566的Datasheet PDF文件第5页浏览型号2SK3566的Datasheet PDF文件第6页  
2SK3566
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK3566
Switching Regulator Applications
Low drain-source ON resistance: R
DS (ON)
= 5.6Ω (typ.)
High forward transfer admittance: |Y
fs
| = 2.0 S (typ.)
Low leakage current: I
DSS
= 100
μA
(V
DS
= 720 V)
Enhancement-mode: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
DC
Drain current
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
900
900
±30
2.5
7.5
40
216
2.5
4
150
-55~150
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
Unit
V
V
V
Pulse (t
=
1 ms)
(Note 1)
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
SC-67
2-10U1B
Weight : 1.7 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
3.125
62.5
Unit
°C/W
°C/W
1
2
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: V
DD
=
90 V, T
ch
=
25°C, L
=
63.4 mH, I
AR
=
2.5 A, R
G
=
25
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
3
1
2005-01-24