2SK973
L
, 2SK973
S
Silicon N-Channel MOS FET
Application
DPAK-1
4
4
High speed power switching
Features
•
•
•
•
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
– Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter,
power switch and solenoid drive
2, 4
12
3
12
3
S type
1. Gate
2. Drain
3. Source
4. Drain
3
L type
1
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
*
**
PW
≤
10 µs, duty cycle
≤
1 %
Value at T
C
= 25 °C
Symbol
V
DSS
V
GSS
I
D
I
D(peak)
*
I
DR
Pch**
Tch
Tstg
Ratings
60
±20
2
8
2
10
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
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HITACHI [ HITACHI SEMICONDUCTOR ]
