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3SK298 参数 Datasheet PDF下载

3SK298图片预览
型号: 3SK298
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道双栅MOS FET [Silicon N-Channel Dual Gate MOS FET]
分类和应用: 晶体小信号场效应晶体管射频小信号场效应晶体管光电二极管放大器
文件页数/大小: 11 页 / 57 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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3SK298
S Parameter
(V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10 mA, Z
O
= 50 )
Freq.
(MHz)
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
S11
MAG.
0.994
0.993
0.986
0.980
0.973
0.950
0.936
0.924
0.912
0.893
0.874
0.859
0.846
0.829
0.810
0.802
0.791
0.778
0.756
0.751
ANG.
–5.8
–11.0
–16.8
–22.5
–27.8
–33.0
–38.3
–43.4
–48.0
–52.5
–57.3
–62.0
–66.1
–69.8
–74.2
–78.0
–81.6
–84.6
–88.5
–92.2
S21
MAG.
2.04
2.02
2.00
1.98
1.94
1.90
1.86
1.83
1.77
1.71
1.67
1.64
1.58
1.50
1.46
1.44
1.38
1.34
1.30
1.26
ANG.
173.6
167.4
161.5
155.5
149.6
142.6
137.1
131.6
126.8
121.0
115.5
111.1
106.7
102.1
97.1
92.7
88.9
84.2
80.2
75.9
S12
MAG.
0.00116
0.00132
0.00229
0.00313
0.00427
0.00473
0.00536
0.00561
0.00562
0.00640
0.00638
0.00647
0.00667
0.00694
0.00661
0.00618
0.00622
0.00615
0.00576
0.00562
ANG.
76.9
85.7
78.2
73.5
68.7
63.9
64.3
64.5
60.9
53.5
49.3
49.0
50.2
49.3
46.6
43.7
44.7
43.6
45.1
40.7
S22
MAG.
0.993
0.993
0.991
0.990
0.987
0.985
0.982
0.979
0.975
0.971
0.967
0.964
0.960
0.955
0.952
0.948
0.944
0.940
0.935
0.932
ANG.
–2.2
–4.5
–6.4
–8.5
–10.5
–12.5
–14.4
–16.2
–18.2
–20.2
–22.0
–23.9
–25.8
–27.6
–29.4
–31.2
–33.2
–35.1
–36.8
–38.5
9