HA13408
t
sus
= 0.118 ms
Where V
CE(sat)
= 1.3 V typ and V
CE(sus)
= 52 V typ.
Power Dissipation
Power dissipation driving an inductive load for an HA13408 is determined as follows:
First, average power dissipation (Pon) per channel at ton is obtained as follows:
.
Pon = V
CE(sat)
I
P
.
V
CC2
1
–
R • I
P
ton
L
R
(3)
Average power dissipation (Psus) at t
sus
:
.
Psus = V
CE(sus)
I
P
.
L
V
CE(sus)
– V
CC2
–
R • I
P
tsus R
1
(4)
Where I
P
and tsus are obtained in equations (1) and (2).
Average power dissipation (P
T
) per channel for a period is obtained as follows:
. 1
P
T
=
.
T
(Pon • ton + Psus • tsus)
(5)
Where drive period is defined as T.
Power dissipation (P
T
) for 9 channels driven at the same time:
. 9
P
T
=
.
T
(Pon • ton + Psus • tsus)
(6)
4
HITACHI [ HITACHI SEMICONDUCTOR ]
