HM514260C, HM51S4260C Series
DC Characteristics
(Ta = 0 to 70°C, V
CC
= 5 V
±5%,
V
SS
= 0 V) (HM51(S)4260C-6R)
(Ta = 0 to 70°C, V
CC
= 5 V
±10%,
V
SS
= 0 V)
(HM51(S)4260C-6/7/8)
HM514260C, HM51S4260C
-6/-6R
Parameter
Operating
current
*1, *2
Standby current
-7
-8
RAS, UCAS
or
LCAS
cycling
t
RC
= min
TTL interface
RAS, UCAS, LCAS
= V
IH
Dout = High-Z
CMOS interface
RAS, UCAS, LCAS, WE,
OE
≥
V
CC
–
0.2 V
Dout = High-Z
CMOS interface
RAS, UCAS, LCAS, OE,
WE
≥
V
CC
–
0.2 V
Dout = High-Z
t
RC
= min
RAS
= V
IH
,
UCAS
or
LCAS
= V
IL
Dout = enable
t
RC
= min
t
PC
= min
Standby: CMOS interface
Dout = High-Z
CBR refresh: t
RC
= 250
µs
t
RAS
≤
1
µs,
UCAS, LCAS
= V
IL
WE, OE
= V
IH
CMOS interface
RAS, UCAS, LCAS
≤
0.2 V,
Dout = High-Z
CMOS interface
RAS, UCAS, LCAS
≤
0.2 V,
Dout = High-Z
Symbol Min Max Min Max Min Max Unit Test Conditions
I
CC1
I
CC2
—
—
150
—
2
—
140
—
2
—
125 mA
2
mA
—
1
—
1
—
1
mA
Standby current
(L-version)
I
CC2
—
200
—
200
—
200
µA
RAS-only
refresh
current
*2
Standby current
*1
CAS-before-RAS
refresh current
*2
Fast page mode
current
*1, *3
Battery backup
current
*4
(Standby
with CBR refresh)
(L-version)
Self-refresh mode
current
(HM51S4260C)
Self-refresh mode
current
(HM51S4260CL)
I
CC3
I
CC5
I
CC6
I
CC7
I
CC10
—
—
—
—
—
140
—
5
—
130
—
5
—
110 mA
5
mA
140
—
150
—
300
—
130
—
130
—
300
—
110 mA
120 mA
300
µA
I
CC11
—
1
—
1
—
1
mA
I
CC11
—
200
—
200
—
200
µA
7
HITACHI [ HITACHI SEMICONDUCTOR ]
