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HM5165165FTT-6 参数 Datasheet PDF下载

HM5165165FTT-6图片预览
型号: HM5165165FTT-6
PDF下载: 下载PDF文件 查看货源
内容描述: 64M EDO DRAM ( 4 Mword ×16位), 8K刷新/ 4K刷新 [64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh]
分类和应用: 动态存储器
文件页数/大小: 37 页 / 499 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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HM5164165F Series
HM5165165F Series
64M EDO DRAM (4-Mword
×
16-bit)
8k refresh/4k refresh
ADE-203-1058B(Z)
Rev. 2.0
Nov. 30, 1999
Description
The Hitachi HM5164165F Series, HM5165165F Series are 64M-bit dynamic RAMs organized as 4,194,304-
word
×
16-bit. They have realized high performance and low power by employing CMOS process technology.
HM5164165F Series, HM5165165F Series offer Extended Data Out (EDO) Page Mode as a high speed
access mode. They have the package variations of standard 50-pin plastic SOJ and standerd 50-pin plastic
TSOPII
Features
Single 3.3 V supply: 3.3 V
±
0.3 V
Access time: 50 ns/60 ns (max)
Power dissipation
Active: 432 mW/396 mW (max) (HM5164165F Series)
: 504 mW/432 mW (max) (HM5165165F Series)
Standby : 1.8 mW (max) (CMOS interface)
: 1.1 mW (max) (L-version)
EDO page mode capability
Refresh cycles
RAS-only
refresh
8192 cycles /64 ms (HM5164165F, HM5164165FL)
4096 cycles /64 ms (HM5165165F, HM5165165FL)
CBR/Hidden refresh
4096 cycles /64 ms (HM5164165F, HM5164165FL, HM5165165F, HM5165165FL)